Method of controlling hillock formation of platinum thin film of semiconductor memory device by ion bombardment
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United States of America Patent
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Feb 11, 2003
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N/A
app pub date -
Mar 10, 2000
filing date -
Oct 24, 1996
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Expired
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Abstract
A method of forming metal thin film of a memory device includes the steps of forming a metal layer on a semiconductor substrate, forming uniform grains on a surface of the metal layer, and forming a dielectric layer on the metal layer.
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