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Abstract

A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 .mu.m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 .mu.m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si.sub.2 Cl.sub.6 mixed with BCl.sub.3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl.sub.3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 .mu.m is formed, and an upper electrode comprising Al having a thickness of approximately 1 .mu.m is formed on the transparent electrode.

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First Claim