Formation of contacts on thin films
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United States of America Patent
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-
Feb 11, 2003
Grant Date -
N/A
app pub date -
May 6, 2002
filing date -
Nov 4, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A simple thin film provided on a substrate which supports a semiconductor device structure, over which is formed a dielectric barrier and a composite metal film contact structure. Contacts are formed by creating holes in the dielectric barrier at locations where contact to an upper region of the semiconductor material is required, and then forming a first metal film extending into the holes to contact a top region of the semiconductor structure. A second set of holes are created to expose an underlying opposite polarity region. Surfaces at the second holes are doped and a second metal film is formed to contact the underlying semiconductor region. The metal structure is then scribed to isolate the contacts to the upper and lower semiconductor regions.
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