Method for analyzing a semiconductor surface
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United States of America Patent
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-
Feb 11, 2003
Grant Date -
Jan 10, 2002
app pub date -
Aug 22, 2001
filing date -
Aug 30, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and apparatus for analyzing a semiconductor surface obtains a sample from a localized section of a wafer. The sample is obtained by isolating a section of a wafer with a sampling apparatus, dispensing liquid onto the isolated section of the wafer, dissolving compounds of interest in the liquid, removing a portion of the liquid, and analyzing the liquid and dissolved compounds of interest. The liquid can be an etching solution, an organic solvent, or other suitable solvent. Samples and analyses can, thus, be obtained as a function of position on the wafer. Analyses as a function of depth can also be determined by sampling and analyzing an isolated portion of the wafer as a function of time.
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