Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method
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United States of America Patent
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Feb 18, 2003
Grant Date -
Sep 26, 2002
app pub date -
Feb 2, 2001
filing date -
Feb 2, 2001
priority date (Note) -
Expired
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Abstract
A method of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film on a surface of some other material, the method including the step of: performing successive sputtering cycles, each cycle including sputtering at a first gas pressure so as to achieve a predetermined first thickness, and sputtering at a second, different gas pressure, so as to obtain a predetermined second thickness. The thin film so deposited has an average stress intermediate between the first stress and the second stress, an average stress that can be made to be approximately equal to a predetermined intermediate stress by a judicious choice of the time for sputtering at each of the two pressures. Usually, the thin film is built up incrementally, using many successive cycles of sputtering at first the first gas pressure and then the second gas pressure.
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