Method for forming selective protection layers on copper interconnects
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 18, 2003
Grant Date -
Dec 19, 2002
app pub date -
Jun 15, 2001
filing date -
Jun 15, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is a method for forming selective protection layers on copper interconnects in a damascene process. A copper layer is deposited overlying a dielectric layer and filling interconnect trenches which are previously formed in the dielectric layer. The excess copper layer is polished by a chemical mechanical polishing process with a slurry comprising an aluminum organic substance. The aluminum organic substance reacts with copper via annealing to selectively form aluminum-copper alloys on the copper interconnects. The aluminum-copper alloys are then oxidized to form aluminum oxide protection layers capping the copper interconnects.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully