Integrated pressure sensor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Feb 18, 2003
Grant Date -
N/A
app pub date -
Sep 12, 2000
filing date -
Sep 12, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
An integrated pressure sensor system and method for making such a device are provided. The pressure system includes a capacitor having an underlying electrode, a dielectric cavity, an upper electrode, and an etch cavity for removing sacrificial material from the dielectric cavity. The surface of the device is relatively flat due to epitaxal deposition of epi polysilicon and single crystal silicon. The capacitor circuit of the pressure sensor system is capable of undergoing CMOS processes without requiring additional steps of covering the capacitor device to protect it and then removing the covering following the CMOS processes.
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