Packaging high power integrated circuit devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Feb 18, 2003
Grant Date -
N/A
app pub date -
Jun 2, 2000
filing date -
Jun 2, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
The invention provides a method and apparatus for electrically connecting the die of a high power semiconductor device to a substrate with a conductive strap such that the connection is resistant to the shear stresses resulting with changes in temperature. In one embodiment, the method includes providing a substrate having first and second portions that are electrically isolated from each other. A semiconductor die having top and bottom surfaces and one or more active electronic devices formed therein is also provided. The device has a first terminal connected to a first conductive layer on the bottom surface of the die, and a second terminal connected to a second conductive layer on the top surface of the die. The first conductive layer is electrically coupled to a top surface of the first portion of the substrate. The second conductive layer is electrically coupled to the second portion of the substrate with a metal strap.
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