Interconnection structure with film to increase adhesion of the bump
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United States of America Patent
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Feb 18, 2003
Grant Date -
N/A
app pub date -
Mar 20, 2000
filing date -
Jul 2, 1999
priority date (Note) -
Expired
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Abstract
A semiconductor device having a highly resistant metal film and a method of producing such a semiconductor device, which includes a metal film formed on an electrode pad, and a protection film formed in an area where he metal film does not exist. The metal film has a greater thickness on its peripheral end portion in contact with the protection film. The semiconductor device can be produced by a semiconductor production method including the steps of activating the surface o the electrode pad with a chelating solution containing glycine and a compound having a metallic element as nuclei, and forming a metal film by electroless metal plating.
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