Method of fabricating copper damascene
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United States of America Patent
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Feb 25, 2003
Grant Date -
N/A
app pub date -
Mar 24, 2000
filing date -
Feb 23, 2000
priority date (Note) -
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Abstract
A method of fabricating copper damascene. In this invention, only crystalline copper metal layer is formed inside the damascene trench and only amorphous copper metal layer is formed outside the damascene trench. During stacking the copper metal layer, copper metal stacks up to form crystalline copper metal with good lattice packing according to the position of the copper seed layer. Conversely, amorphous copper metal is formed in positions where no copper seed layer exists. Since the amorphous copper metal is softer than the crystalline copper metal, lower pressure and the ordinary slurry are used in chemical mechanical polishing to remove amorphous copper metal layer outside the damascene trench, in order to form a flat-surfaced copper damascene structure.
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