Method for forming insulating film and for manufacturing integrated circuit
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United States of America Patent
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Feb 25, 2003
Grant Date -
Jan 9, 2003
app pub date -
Oct 5, 2001
filing date -
Jul 6, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.
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