Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
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United States of America Patent
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Feb 25, 2003
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app pub date -
Aug 13, 2001
filing date -
Aug 13, 2001
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Abstract
A three-dimensional, field-programmable, non-volatile memory includes multiple layers of first and second crossing conductors. Pillars are self-aligned at the intersection of adjacent first and second crossing conductors, and each pillar includes at least an anti-fuse layer. The pillars form memory cells with the adjacent conductors, and each memory cell includes first and second diode components separated by the anti-fuse layer. The diode components form a diode only after the anti-fuse layer is disrupted.
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