Importance

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Abstract

Systems and methods are provided for a temperature-compensated threshold voltage V.sub.T. The stability problems associated with temperature changes are reduced for LL4TCMOS SRAM cells by providing a temperature-compensated V.sub.TN. According to one embodiment, a temperature-based modulation of a V.sub.BB potential back-biases a triple-well transistor with a temperature-compensated voltage to provide the pull-down transistor with a temperature-compensated V.sub.TN that is flat or relatively flat with respect to temperature. One embodiment provides a bias generator, including a charge pump coupled to a body terminal of the transistor(s), and a comparator coupled to the charge pump. The comparator includes a first input that receives a reference voltage, a second input that receives a V.sub.T-dependent voltage, and an output that presents a control signal to the charge pump and causes the charge pump to selectively charge the body terminal of the transistor to compensate for temperature changes.

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First Claim