Anode for plating a semiconductor wafer
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United States of America Patent
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Mar 11, 2003
Grant Date -
Aug 22, 2002
app pub date -
Feb 21, 2001
filing date -
Feb 21, 2001
priority date (Note) -
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Abstract
An anode for use in electroplating semiconductor wafers, comprising a metal plate formed from a generally continuous casting process that is essentially free of voids or cracks, the casting being thermo-mechanically worked until the anode has an average grain size of less than 100 .mu.m.
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