Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
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United States of America Patent
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Mar 11, 2003
Grant Date -
Nov 21, 2002
app pub date -
Apr 5, 2001
filing date -
Apr 5, 2001
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Abstract
A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.
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