Data management for multi-bit-per-cell memories

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United States of America Patent

PATENT NO 6532556
SERIAL NO

09492949

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A multi-bit-per-cell memory reduces the effect of defects and data errors by scrambling data bits before writing data. The scrambling prevents storage of consecutive bits in the same memory cell. When a memory cell is defective or produces an error, the bits read from the memory cell do not create consecutive bit errors that would be noticeable or uncorrectable. An error or a defect in a multi-bit memory cell causes at most scattered bit errors. Scramblers in multi-bit-per-cell memories can include 1) hardwired lines crossing between an input port and an output port, 2) programmable wiring options, 3) a linear buffer where reads from the buffer use addresses with swapped bits, or 4) a buffer array that switches between incrementing a row address first and incrementing a column address first when accessing memory cells in the buffer array.

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Patent Owner(s)

  • MULTI LEVEL MEMORY TECHNOLOGY (NEVADA);SAMSUNG ELECTRONICS CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
So, Hock Chuen Redwood City, CA 1 234
Wong, Sau Ching Hillsborough, CA 38 1648

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