Method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and system for accomplishing same
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United States of America Patent
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Mar 18, 2003
Grant Date -
N/A
app pub date -
Jul 19, 2001
filing date -
Jul 19, 2001
priority date (Note) -
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Abstract
The present invention is generally directed to a method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and a system for accomplishing same. In one illustrative embodiment, the method comprises providing a first wafer having a process layer formed thereabove, determining a duration of an endpoint polishing process performed on the process layer on the wafer, providing a second wafer having a process layer formed thereabove, and modifying at least one parameter of the endpoint polishing process to be performed on the process layer formed above the second wafer based upon a variance between the determined duration of the endpoint polishing process performed on the process layer on the first wafer and a target value for the duration of the endpoint polishing process.
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