Dual level contacts and method for forming
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Mar 18, 2003
Grant Date -
N/A
app pub date -
Mar 9, 2000
filing date -
Mar 9, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for making electrical contacts to device regions in a semiconductor substrate, and the resulting structure, is presented. A first set of borderless contacts is initially formed. This first set of contacts is then contacted by a second series of smaller, upper-level contacts. The second set of contacts also contact the gate of the device. The structure which results has a form wherein there are stacked contacts to the diffusion layer, and a single level contact to the device gate. The structure further provides local interconnectability over gate structures.
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