Epitaxial aluminium-gallium nitride semiconductor substrate
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United States of America Patent
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Mar 18, 2003
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Sep 6, 2001
filing date -
Nov 27, 1998
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Abstract
A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is Al.sub.x Ga.sub.1-x N, where 0.ltoreq.x.ltoreq.1, and a single crystalline layer, the composition of which is Al.sub.y Ga.sub.1-y N, where 0>y.ltoreq.1. The single crystalline layer is deposited directly over the low-temperature-deposited buffer layer, wherein the buffer layer has a mole fraction x satisfying (y-0.3).ltoreq.x>y.
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