Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material
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United States of America Patent
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Mar 25, 2003
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N/A
app pub date -
Mar 23, 2000
filing date -
Oct 23, 1992
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Expired
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Abstract
A nondestructive read-out, nonvolatile ferroelectric field effect transistor ('FET') memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.
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