Method and apparatus for characterizing an interconnect structure profile using scatterometry measurements
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United States of America Patent
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Mar 25, 2003
Grant Date -
N/A
app pub date -
Jun 19, 2001
filing date -
Jun 19, 2001
priority date (Note) -
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Abstract
A method for characterizing an interconnect structure profile includes providing a wafer having a grating structure including a plurality of interconnect structures; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and determining a profile of the interconnect structures based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure including a plurality of interconnect structures includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to determine a profile of the interconnect structures based on the reflection profile.
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