Forming metal silicide resistant to subsequent thermal processing
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United States of America Patent
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Mar 25, 2003
Issued Date -
N/A
app pub date -
Oct 27, 2000
filing date -
Sep 2, 1998
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Abstract
A metal suicide film and method of forming the same are provided. The method comprises depositing metal silicide layers onto a substrate assembly with alternating layers of silicon. The resulting metal silicide film has a disrupted grain structure and smaller grain sizes than prior art films of the same thickness, which increases the resistance of the material to stress cracks in subsequent thermal processing and reduces the overall residual stress of the material.
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