Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 25, 2003
Grant Date -
Jul 4, 2002
app pub date -
Oct 18, 2001
filing date -
Sep 28, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully