Semiconductor integrated circuit device and method for making the same
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United States of America Patent
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Mar 25, 2003
Issued Date -
N/A
app pub date -
Aug 21, 2001
filing date -
Jan 11, 1995
priority date (Note) -
Expired
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Abstract
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
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