Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same

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United States of America Patent

PATENT NO 6538367
SERIAL NO

09369802

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Abstract

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This invention is predicated on applicants' discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission. In accordance with the invention, an improved field emitting nanoconductors assembly (a 'low density nanoconductor assembly') comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.

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Patent Owner(s)

Patent OwnerAddress
BELL SEMICONDUCTOR LLC401 N MICHIGAN AVE SUITE 1600 CHICAGO IL 60611

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Kyung Moon Scotch Plains, NJ 3 324
Jin, Sungho Millington, NJ 280 7806
Kochanski, Gregory Peter Dunellen, NJ 29 1235
Zhu, Wei Warren, NJ 383 5693

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