Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
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United States of America Patent
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Mar 25, 2003
Grant Date -
N/A
app pub date -
Nov 30, 1999
filing date -
Nov 30, 1999
priority date (Note) -
Expired
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Abstract
SILC characteristics and density of GOI defects of silicon wafers with thin dielectric films (e.g. SiO.sub.2) are determined using a non-contact method that does not require any test structures on the wafer. The method includes stressing a dielectric with a corona discharge and measuring the dielectric current-dielectric voltage (I-V) characteristics by monitoring under illumination the corona charge neutralization after stress. An I-V measurement done as function of corona fluence gives SILC characteristics of the wafer. The SILC characteristics are then compared at a constant dielectric field to provide a measure of GOI defect density. The I-V characteristic corresponding to low fluence that does not generate measurable SILC are used to determine a thickness of dielectric film.
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