System and method for characterizing macro-grating test patterns in advanced lithography and etch processes
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United States of America Patent
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Mar 25, 2003
Grant Date -
Sep 19, 2002
app pub date -
Feb 5, 2002
filing date -
Jan 26, 2001
priority date (Note) -
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Abstract
The invention teaches a method and system for an accurate profile characterization of test patterns that may be implemented for real time use in a fabrication line. One embodiment is a non-destructive method for acquiring file data of the test pattern lines through the use of spectrum data measured with an optical metrology device and a profile library. The profile data comprise critical dimensions of all the test pattern lines included in the set of parameters to create the profile library. The test pattern lines may be designed to evaluate the effectiveness of measures to correct optical proximity, micro-loading or other process effects.
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