Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 25, 2003
Grant Date -
Dec 5, 2002
app pub date -
May 22, 2001
filing date -
May 22, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Increased accuracy of measurement of variation of a critical dimension is achieved through measurement of area of a test mark by detection of intensity of radiation such as broadband light with which at least a portion of a test mark is imaged. The test mark is preferably formed by partial lithographic exposures of overlapping features, preferably lines having a width approximating a critical dimension of interest and at a shallow angle to each other such that the test mark has the shape of a parallelogram or rhombus.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully