Chromium adhesion layer for copper vias in low-k technology
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United States of America Patent
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Apr 1, 2003
Grant Date -
Jul 11, 2002
app pub date -
Jan 11, 2001
filing date -
Jan 11, 2001
priority date (Note) -
Expired
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Abstract
In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Cr, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while maintaining low resistance.
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