Infrared end-point detection system
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United States of America Patent
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Apr 1, 2003
Grant Date -
N/A
app pub date -
Oct 13, 2000
filing date -
Oct 13, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A chemical mechanical planarization system and methods for implementing infrared detection of process state and substrate surface composition are provided. In one example, the chemical mechanical planarization system includes a substrate chuck to hold and rotate a substrate, a preparation head mounted on a preparation carrier, and a conditioning head mounted on a conditioning carrier. The preparation head is configured to be applied against the substrate, overlapping at least a portion of the substrate of an area smaller than the entire surface area of the substrate. The system further includes an infrared sensor positioned over the substrate to sense infrared emissions from the surface of the substrate. Several examples of infrared sensors are provided including single point, scanning, and array infrared sensors. In another example, a method of determining process state and surface composition of a substrate using infrared sensing is provided. During chemical mechanical planarization, an infrared sensor is positioned to sense infrared emissions from the surface of a substrate, and to analyze the infrared emissions to determine process state and to generate a topographical detail of the substrate.
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