Piggyback programming using voltage control for multi-level cell flash memory designs
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United States of America Patent
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Apr 1, 2003
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N/A
app pub date -
Feb 8, 2001
filing date -
Feb 8, 2001
priority date (Note) -
Expired
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Abstract
A method of programming a memory cell includes generating a programming pulse with stepped portions and programming the memory cell with the programming pulse. The memory cell may have 2.sup.N voltage levels, where N>1 and represents the number of bits stored within the memory cell. At least two of the 2.sup.N voltage levels can be programmed with the programming pulse.
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