Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6542407
SERIAL NO

10052759

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jian San Jose, CA 1536 22502
Mak, Alexander K Los Altos, CA 9 501
Pham, Long C San Jose, CA 6 475

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation