Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing
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United States of America Patent
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Apr 8, 2003
Grant Date -
N/A
app pub date -
Mar 22, 2000
filing date -
Mar 22, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A processing reactor for processing semiconductor substrates includes a reactor housing, which defines a processing chamber, and a platform which is rotatably supported in the reactor housing for supporting a substrate in the processing chamber. The processing reactor further includes a gas injection assembly which is adapted to inject at least one gas into the processing chamber. The gas injection assembly has a substrate facing surface, which is adapted to vary the dynamic pressure in the processing chamber to vary the processing time of the semiconductor substrate in the processing chamber. For example, gas injection assembly may include a gas injection manifold, which includes the substrate facing surface. Preferably the substrate facing surface is repositionable in the processing chamber to vary the dynamic pressure in said processing chamber.
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