Memory cell, memory device and method of fabricating the same
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United States of America Patent
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Apr 8, 2003
Issued Date -
N/A
app pub date -
Apr 24, 2001
filing date -
May 16, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A memory device and method of forming the same, includes a plurality of wordlines for applying a cell driving signal, a plurality of bitlines for inputting or outputting data, and a plurality of cells, each cell having a first gate, source and drain electrodes and a second gate, wherein either the first or second gate is connected to one of the wordlines, the source electrode is connected to one of the bitlines, and the drain electrode is connected to either the first or second gate which is not connected to the one wordline.
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