Metal film interrupting process
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United States of America Patent
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-
Apr 8, 2003
Issued Date -
N/A
app pub date -
Nov 7, 2000
filing date -
Apr 9, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A simple thin film structure is illustrated in which a substrate (11), which may be glass or any other suitable substrate material, supports a device structure (12), over which is formed an inert dielectric layer (13) and a metal film (14). A pulsed laser beam (15) directed at the surface of the metal film layer (14). When the laser is pulsed on, a small amount of metal is ablated directly under the beam and surface tension in the surface of molten metal surrounding the ablated region pulls the metal back from the hole causing a slight thickening of the metal (17) around the hole, and creates a hole (16) which is significantly larger in diameter than the ablated region.
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