Image sensor capable of decreasing leakage current between diodes and method for fabricating the same
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United States of America Patent
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-
Apr 8, 2003
Grant Date -
Feb 28, 2002
app pub date -
Mar 19, 2001
filing date -
Aug 31, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An image sensor capable of preventing the degradation of pinned photodiodes and the generation of leakage current between neighboring pinned photodiodes is provided. The disclosed image sensor contains a plurality of pixel units, each pixel unit having a photodiode region. The image sensor includes a semiconductor substrate of a first conductivity type; a device isolation layer formed in the semiconductor substrate; a field stop layer formed beneath the device isolation layer; a trench formed in the semiconductor substrate, wherein the trench surrounds the photodiode region; a first doping region of the first conductivity type formed beneath the surface of the semiconductor substrate and beneath the surfaces of the trench; an insulating member filling the trench; and a second doping region of a second conductivity type formed in the semiconductor substrate under the first doping region.
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