Semiconductor device having a barrier layer
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United States of America Patent
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Apr 8, 2003
Grant Date -
N/A
app pub date -
Feb 7, 2000
filing date -
Feb 15, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
In a semiconductor device such as a CSP, re-wiring is provided on a circuit element formation region of a semiconductor substrate and a columnar electrode for connection with a circuit board is provided on the re-wiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film on the circuit element formation region. A re-wiring is provided over the ground potential layer with a second insulating film interposed. Since the ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region, it is possible to eliminate crosstalk between the re-wiring and a circuit within the circuit element formation region and to freely position the re-wiring without restrictions.
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