Self-aligned resistive plugs for forming memory cell with phase change material
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United States of America Patent
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Apr 8, 2003
Grant Date -
N/A
app pub date -
Dec 17, 2001
filing date -
Dec 17, 2001
priority date (Note) -
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Abstract
Memory devices are disclosed for storage and retrieval of information, wherein resistive plugs are provided above and below a phase change material to form a memory cell. The plugs may be formed by implanting regions in high resistivity material above and below a phase change material layer to lower the resistivity in the implanted regions.
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