METHOD OF PREPARING SILICON-ON-INSULATOR SUBSTRATES PARTICULARLY SUITED FOR MICROWAVE APPLICATIONS
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United States of America Patent
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app pub date -
Mar 16, 2000
filing date -
Mar 16, 2000
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Abstract
A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.
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