Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less
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United States of America Patent
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Apr 15, 2003
Grant Date -
May 30, 2002
app pub date -
Sep 28, 1998
filing date -
Sep 30, 1997
priority date (Note) -
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Abstract
On a substrate, there is disposed a gate electrode having a section of a trapezoidal configuration expanded toward the substrate. The gate electrode is covered with a silicon nitride film having a thickness T1 of 400 .ANG., and a silicon oxide film having a thickness T2 of 1200 .ANG.is formed on the silicon nitride film. A polycrystalline silicon film constructing an active region is formed on a gate insulating film constituted of the silicon nitride film and the silicon oxide film. By forming the silicon oxide film in a sufficient thickness of 1200 .ANG.or more, and further forming the silicon nitride film 23 of 400 .ANG.or more, a thin-film transistor cannot easily be influenced by a stepped portion formed by the gate electrode, and withstanding voltage of the gate insulating film of the thin-film transistor can be enhanced.
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