Optoelectronic device having a highly conductive carrier tunneling current aperture
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United States of America Patent
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Apr 15, 2003
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N/A
app pub date -
Nov 2, 2000
filing date -
Nov 2, 2000
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Abstract
An optoelectronic device having a highly conductive carrier tunneling current aperture. The device includes a centrally positioned current aperture formed from a quantum layer made of a III-IV-V semiconductor compound, which is doped with a first doping type. The current aperture is laterally confined by an oxide of the III-IV-V semiconductor compound. Adjacent layers are also formed of a semiconductor material that is doped with the first doping type.
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