Ferroelectric storage read-write memory

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United States of America Patent

PATENT NO 6548843
APP PUB NO 20020089005A1
SERIAL NO

09190131

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Abstract

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A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current therebetween.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Saraf, Ravi F Briar Cliff Manor, NY 44 588
Wickramasinghe, Hemantha K Chappaqua, NY 51 1136

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