Semiconductor wafer processing apparatus and method
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United States of America Patent
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Apr 15, 2003
Grant Date -
Feb 13, 2003
app pub date -
Sep 6, 2001
filing date -
Aug 13, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.
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