Semiconductor device including gate insulation films having different thicknesses
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United States of America Patent
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-
Apr 22, 2003
Grant Date -
Nov 21, 2002
app pub date -
May 9, 2002
filing date -
May 15, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming three gate oxide films having different thicknesses in first through third circuit areas, respectively. The method includes the consecutive steps of forming a first gate oxide film having a largest thickness in all the areas, removing the first gate oxide film and forming a second gate oxide film having a second largest thickness in the second circuit area, and removing the first gate oxide and forming a third gate oxide film having a smallest thickness in the third circuit area. The resultant gate oxide films have accurate thicknesses.
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