Melt through contact formation method
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United States of America Patent
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-
Apr 22, 2003
Grant Date -
N/A
app pub date -
May 31, 2001
filing date -
Oct 12, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thin film photovoltaic devices is described, having a glass substrate 11 over which is formed a thin film silicon device having an n.sup.++ layer 12, a p layer 13 and a dielectric layer 14 (typically silicon oxide or silicon nitride). To create a connection through the p layer 13 to the underlying n.sup.++ layer 12, a column of semi-conductor material is heated, the column passing through the various doped layers and the material in the column being heated or melted to allow migration of dopant between layer of the device in the region of the column.
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