Use of gate electrode workfunction to improve DRAM refresh
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 22, 2003
Grant Date -
N/A
app pub date -
Nov 27, 2000
filing date -
Nov 27, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
This invention relates to a method and resulting structure, wherein a DRAM may be fabricated by using silicon midgap materials for transistor gate electrodes, thereby improving refresh characteristics of access transistors. The threshold voltage may be set with reduced substrate doping requirements. Current leakage is improved by this process as well.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully