Method for supply gating low power electronic devices
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United States of America Patent
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Apr 22, 2003
Grant Date -
N/A
app pub date -
May 31, 2001
filing date -
May 31, 2001
priority date (Note) -
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Abstract
A method for supply gating low power electronic devices uses low threshold gating transistors. The low power devices operate at supply voltages of less than one volt and typically in the range of 150 to 400 millivolts. Using low threshold gating transistors, the leakage current of the devices, and therefore the standby power dissipation, can be optimized by using any one, or a combination of, four methods including: overdriving the low threshold gating transistors on; overdriving the low threshold gating transistors off; combining very low threshold device transistors with low threshold gating transistors; and providing the low threshold gating transistors with back bias.
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