Piggyback programming using an extended first pulse for multi-level cell flash memory designs
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United States of America Patent
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Apr 22, 2003
Grant Date -
N/A
app pub date -
Feb 8, 2001
filing date -
Feb 8, 2001
priority date (Note) -
Expired
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Abstract
A method of programming a memory cell that has 2.sup.N voltage levels where N>1 and represents the number of bits stored within the memory cell. The method includes generating a first programming pulse, generating a second programming pulse subsequent to the generating the first programming pulse, wherein the first programming pulse has a width that is greater than the second programming pulse and programming at least two of the 2.sup.N voltage levels with the first programming pulse.
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