Mask ROM cell and method of fabricating the same
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United States of America Patent
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-
Apr 29, 2003
Grant Date -
Nov 1, 2001
app pub date -
Sep 9, 1998
filing date -
Dec 30, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Mask ROM cell and method of fabricating the same, is disclosed, including a semiconductor substrate of a first conductivity type, a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one direction, having a predetermined distance therebetween, an insulating layer formed on a portion of the semiconductor substrate, corresponding to each impurity diffusion region, a gate insulating layer formed on only a portion of the semiconductor substrate, between the impurity diffusion regions and a plurality of conductive lines formed on the gate insulating layer and insulating layer in a predetermined interval, being perpendicular to the impurity diffusion regions.
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