Acoustic wave device and process for forming the same
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United States of America Patent
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Apr 29, 2003
Grant Date -
N/A
app pub date -
Jul 24, 2000
filing date -
Jul 24, 2000
priority date (Note) -
Expired
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Abstract
High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
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